ASAP Semiconductor

Bae Systems Inc

1372PD1124

Microcircuit Memory

Specifications

Part Number1372PD1124
DescriptionMicrocircuit Memory
ManufacturerBae Systems Inc
NSN5962-01-372-6628(5962013726628)
Item NameMicrocircuit Memory
CAGE Code72314
NIIN01-372-6628(013726628)
FSC Code5962 Microcircuits Electronic
FSG Code59 Electrical and Electronic Equipment Components
INC Code41015
NCB Code01
CountryUSA

Description

Microcircuit Memory

Request a Quote

1
2
3

Part Information

If You Have Multiple Parts Requirement, You Can Upload Your Parts List or BOM Here!

NSN Information for Part Number 1372PD1124 with NSN 5962-01-372-6628, 5962013726628

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962013726628

Item Description:

Microcircuit Memory

59620137266280NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
1372pd1124523

Characteristics Data of NSN 5962-01-372-6628, 5962013726628

MRCCriteriaCharacteristic
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 020 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORYCQZPINPUT CIRCUIT PATTERN15 INPUT
MEMORYCTQXCURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM INPUT
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCXCYPART NAME ASSIGNED BY CONTROLLING AGENCYRAMS SCRAMS
MEMORYCZEPCAPITANCE RATING PER CHARACTERISTIC5 00 INPUT PICOFARADS NOMINAL AND 7 00 OUTPUT PICOFARADS NOMINAL
MEMORYCBBLFEATURES PROVIDEDHIGH SPEED AND STATIC OPERATION AND HIGH PERFORMANCE AND WENABLE AND HIGH IMPEDANCE AND WDISABLE AND HERMETICALLY SEALED
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYADAQBODY LENGTH0 860 INCHES MINIMUM AND 0 960 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCZEQTIME RATING PER CHACTERISTIC15 00 NANOSECONDS MAXIMUM ACCESS
MEMORYTTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT